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 MTP20N15E
Preferred Device
Power MOSFET 20 Amps, 150 Volts
N-Channel TO-220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage - Continuous - Non-Repetitive (tp 10 ms) Drain - Continuous - Continuous @ 100C - Single Pulse (tp 10 s) Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Single Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 120 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 0.3 mH) Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 150 150 20 32 20 12 60 112 0.9 -55 to 150 60 Unit Vdc Vdc Vdc Adc TO-220AB CASE 221A STYLE 5 1 4
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20 AMPERES 150 VOLTS RDS(on) = 130 m
N-Channel D
G S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
Watts W/C C mJ 2 3
MTP20N15E LLYWW 3 Source 2 Drain
1 Gate
C/W RJC RJA TL 1.1 62.5 260 C
MTP20N15E LL Y WW
= Device Code = Location Code = Year = Work Week
ORDERING INFORMATION
Device MTP20N15E Package TO-220AB Shipping 50 Units/Rail
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2001
1
January, 2001 - Rev. 0
Publication Order Number: MTP20N15E/D
MTP20N15E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Collector Current (VDS = 150 Vdc, VGS = 0 Vdc) (VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Temperature Coefficient (Negative) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 10 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125C) Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 120 Vdc, ID = 20 Adc, VGS = 10 Vdc) (VDD = 75 Vdc, ID = 20 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Note 1.) (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) VSD - - trr (IS = 20 Adc, VGS = 0 Vdc, Adc Vdc dIS/dt = 100 A/s) Reverse Recovery Stored Charge 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. ta tb QRR - - - - - - 160 123 36.5 1.1 1.5 - - - - - C ns Vdc - - - - - - - - 11 77 33 49 39.1 7.5 22 17 25 153 67 97 55.9 - - - nC ns (VDS = 25 Vd VGS = 0 Vdc, Vd Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 1133 332 105 1627 474 174 pF VGS(th) 2.0 - RDS(on) VDS(on) - - gFS 8.0 - - 11 2.8 2.6 - mhos - - TBD 0.12 4.0 - 0.13 Vdc mV/C Ohm Vdc V(BR)DSS 150 - IDSS - - IGSS(f) IGSS(r) - - - - - - 10 100 100 100 nAdc - TBD - - Vdc mV/C Adc Symbol Min Typ Max Unit
Reverse Recovery Time
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MTP20N15E
PACKAGE DIMENSIONS
TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F T S
C
Q
123
A U K
H Z L V G D N R J
STYLE 5: PIN 1. 2. 3. 4.
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MTP20N15E
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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MTP20N15E/D


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